Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device

The electrically detected orbital spectrum of a mesoscopic silicon device containing small number donors has been investigated. was fabricated on silicon-on-insulator with an optically active channel 6×105 substitutional bismuth centers introduced by ion implantation. 1s(A1)→2p± transition at the energy associated isolated via change in photocurrent when illuminated THz light from free electron laser. spectral dependence bias, temperature, and laser intensity is explored to determine optimum conditions for detecting transitions smaller devices fewer donors. These results suggest that photo-induced impact ionization can offer route spectroscopic detection few impurities providing useful tool development solid-state quantum technologies.